A group of researchers from the Shanghai Institute of Optics and Fine Mechanics (SIOM) of the Chinese Academy of Sciences recently came up with a new theory on the source of residual infrared absorption in Ti:sapphire laser crystals.
Chinese Academy of Sciences
Recently, a research group from Shanghai Institute of Optics and Fine Mechanics (SIOM) of the Chinese Academy of Sciences proposed a new theory on the origin of residual infrared absorption in Ti:sapphire laser crystals. The related research results have been published in Photonics Research on May 4, 2021.
Ti:sapphire (also called Ti-doped α-Al
2O
3) is one of the three basic laser crystal materials. Due to its excellent physical and chemical, spectral, and laser properties, Ti:sapphire has been one of the key materials for super-intense ultrafast laser devices.
Since the laser properties of Ti:sapphire was reported in 1982, the residual infrared absorption (with peak value around 800 nm), coincident with the laser emission band, has been the key problem affecting its laser emission efficiency. Therefore, the determination of the origin of residual infrared absorption has been a research hotspot in the community of Ti:sapphire laser crystals.
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Chinese Academy of Sciences
Recently, researchers from the Shanghai Institute of Optics and Fine Mechanics (SIOM) of the Chinese Academy of Sciences (CAS) have revealed the competitive behavior of bound electrons and free electrons in Epsilon-Near-Zero (ENZ) materials irradiated by ultrafast laser pulses.
They proposed the principle and method of synchronously tailoring the saturated absorption (SA) and reverse saturated absorption (RSA) of ENZ materials, which greatly broadened the ability to control the nonlinear optical response at the ENZ wavelength. Relevant study has been published in Photonics Research on April 15.
ENZ material means that in a specific wavelength range, the real part of the dielectric permittivity of the material approaches zero (ε~0). Theoretically, the limited dielectric permittivity change can obtain a great refractive index change. Therefore, compared with other nonlinear materials, ENZ materials have a larger nonlinear optical respo
Novel Metasurface can Realize Near-IR Full-Stokes Polarization Vectors Detection
Written by AZoOpticsMay 10 2021
Recently a research group from the Shanghai Institute of Optics and Fine Mechanics (SIOM) of the Chinese Academy of Sciences (CAS) performed numerical simulation and experimental demonstration of a pixelated metasurface based on the silicon-on-insulated (SOI) wafer.
Three-dimensional schematic of the pixel unit. The colors are used only for the distinguishment of the image and bear no wavelength information. (F0, F1, F2) and F3 represent linear polarizers and circular polarizer, respectively. Image Credit: Shanghai Institute of Optics and Fine Mechanics.
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st, 2021.
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