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MIL-OSI: Micron Accelerates Breakthrough Platform Innovation With Advancements Across Industry s First 176-Layer NAND and 1-Alpha DRAM

MIL-OSI: Micron Accelerates Breakthrough Platform Innovation With Advancements Across Industry s First 176-Layer NAND and 1-Alpha DRAM
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CDRLabs com - MIcron Unveils New Memory And Storage Innovations At Computex 2021

Micron Technology, Inc., today unveiled memory and storage innovations across its portfolio based on its industry-leading 176-layer NAND and 1α (1-alpha) DRAM technology, as well as the industry’s first Universal Flash Storage (UFS) 3.1 solution for automotive applications. The new portfolio additions deliver on the company’s vision of accelerating data-driven insights through innovations in memory and storage that enable new capabilities from the data center to the intelligent edge. Micron President and CEO Sanjay Mehrotra made the announcements during a Computex keynote, in which he shared a sweeping vision for computing innovation and the central role memory and storage play in enabling enterprises to seize the full potential of the data economy.

MIPI UFS v3 1 Host Controller IP, Compatible with M-PHY and Unipro

MIPI UFS v3.1 Host Controller IP, Compatible with M-PHY and Unipro Our Universal Flash Storage (UFS) Controller IP is compliant with the latest JEDEC UFS v3.1 specification. The UFS standard is a high performance, low power serial interface that efficiently moves data between a host processor and mass storage devices. When our UFS Controller IP is combined with in-house developed UniPro Controller IP and M-PHY IP, designers can easily integrate PHY and the controller with low risk and accelerate time-to market with our UFS IP solution. Verification : View see the entire get in contact with Block Diagram of the MIPI UFS v3.1 Host Controller IP, Compatible with M-PHY and Unipro

Micron Accelerates Breakthrough Platform Innovation With Advancements Across Industry s First 176-Layer NAND and 1-Alpha DRAM

Micron Accelerates Breakthrough Platform Innovation With Advancements Across Industry s First 176-Layer NAND and 1-Alpha DRAM
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