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p-type semiconductor) and an electron transport layer ( n-type semiconductor) on top. If the perovskite film preferentially features a p-type surface, it will cause nonradiative recombination across the interface with the electron transport layer. Manipulating the surface energetics, however, from intrinsic p- to n-type will better match the top electron transport layer, improving charge transport and thus device performance. Limiting nonradiative-recombination losses by “electronically passivating perovskite bulk and interface defects and energetically modifying the interface,” explains senior author Qinye Bao at East China Normal University, Shanghai, China, are therefore “highly critical issues to improve both efficiency and stability” of PSCs. A spicy solution

Qinye bao at east china normal universityQinye baoEast china normal universityகிழக்கு சீனா சாதாரண பல்கலைக்கழகம்