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V. Chandra Chandrasekar and Susan James, both faculty members in the Walter Scott, Jr. College of Engineering at Colorado State University, have been named Fellows of the National Academy of Inventors, the organization announced Dec. 8.
The NAI Fellows Program highlights academic inventors who have demonstrated a spirit of innovation in creating or facilitating outstanding inventions that have made a tangible impact on quality of life, economic development and the welfare of society. Election to NAI Fellow is the highest professional distinction accorded solely to academic inventors.
Chandrasekar, a University Distinguished Professor in the Department of Electrical and Computer Engineering, is also a fellow of the Cooperative Institute for Research in the Atmosphere. He is a leading expert in the fields of weather radar and radar signal processing, and he holds 35 patents in radar system design, radar network development, radiofrequency communications, and more.
Nanotechnology Now - Press Release: Discovery suggests new promise for nonsilicon computer transistors: Once deemed suitable only for high-speed communication systems, an alloy called InGaAs might one day rival silicon in high-performance computing
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Paul Hansma
Photo Credit: COURTESY IMAGE
Abstract:
Necessity is the mother of invention, and nowhere does that aphorism apply more than in the realm of humans and their physical needs.
Building Useful Gadgets: Biophysicist Paul Hansma joins the National Academy of Inventors
Santa Barbara, CA | Posted on December 9th, 2020
That need has inspired Paul Hansma, a UC Santa Barbara biophysicist, to devote decades of his career to developing instruments that can advance medicine in the diagnosis and treatment of some of the most debilitating conditions, thereby improving human health.
What I find most fascinating and fun about inventing is working with an interdisciplinary team to create really helpful gadgets, Hansma said.
Nanotechnology Now
Home > Press > Multiple Semiconductor Type Switching To Boost Thermoelectric Conversion of Waste Heat
Figure 1. Thermoelectric device that converts waste heat into electricity
Tin monoselenide (SnSe), when doped with antimony (Sb), can make for a suitable candidate for the design of thermoelectric conversion elements (p-n junction device).
Abstract:
Scientists at Tokyo Institute of Technology (Tokyo Tech) demonstrate double charge carrier type switching of tin monoselenide (SnSe) semiconductor by doping of antimony (Sb). The SnSe carrier type switches from p-type to n-type, and re-switches to p-type as doping increases, due to the switching of major Sb substitution site from Se to Sn, promising reliable charge polarity control, leading to realization of SnSe-based p/n homojunction thermoelectric device for converting waste heat into electricity and new insights on impurity doping of compound semiconductors.
Innovative research helping people with Parkinson’s disease communicate better
Note to journalists: Photographs of Jessica Huber and the SpeechVive device are available via Google Drive. Journalists visiting campus should follow visitor health guidelines.
SpeechVive is being showcased at the Association of Public and Land-grant Universities and the Association of American Universities’ third-annual University Innovation and Entrepreneurship Showcase. (Photo provided by SpeechVive)
SpeechVive born at Purdue University, spotlighted during Innovation and Entrepreneurship Showcase
WEST LAFAYETTE, Ind. Purdue University speech scientist Jessica Huber has watched people with Parkinson’s disease struggle to speak, which often led to social isolation and depression.
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