A team of researchers from multiple institutions have successfully come up with a novel way of transforming an otherwise less-conducting organic material into an efficient conductor of electricity for electronic application. This paves the way for development of cost-effective, structurally and functionally amenable semiconductor devices, thus marking the dawn of a new era in semiconductor technology.
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IMAGE: Due to the strong light-matter interaction at the nano (2D) scale, scientists can find new ways of controlling electrical and optical properties and develop strategies to artificially tailor the optoelectronic. view more
Credit: 2Exciting
The trainees will study the fundamental physics of the light-matter interaction in two-dimensional semiconductor materials to develop innovative optoelectronic devices for telecommunications and next generation technology applications. 2Exciting was granted a budget of 3.92 million under Horizon 2020 Marie Sk?odowska-Curie Action, Innovative Training Network Programme.
Technology based on atomically thin, two-dimensional semiconductors (2DS) will underpin the next generation of innovations in computing, energy, and beyond. Due to the strong light-matter interaction at the nano (2D) scale, scientists can find new ways of controlling electrical and optical properties and develop strategies to artificially tailor the opto
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IMAGE: Measurement system and observation image of TDs in GaN semiconductor by multiphoton excitation photoluminescence method. TDs are observed as dark lines. view more
Credit: Osaka University
Osaka - Gallium nitride (GaN) is a semiconductor material whose wide band gap may one day lead to it superseding silicon in electronics applications. It is therefore important to have GaN characterization techniques that are able to support the development of GaN devices. Researchers at Osaka University have reported a nondestructive method for characterizing the crystalline quality of GaN. Their findings were published in
Applied Physics Express.
GaN power switching devices offer numerous advantages including high-speed switching, high-power operation, low on-resistance, and high breakdown voltage. To take advantage of these properties, the defect density of GaN crystals must be low.
Researchers investigated the high-loss free space high-precision time-frequency dissemination experiment between remote locations, simulating the high-precision time-frequency high-orbit satellite-ground links in the channel loss, atmospheric noise, and transmission delay effects.
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IMAGE: Photograph of the sheet-type piezoelectric system. Accurate biomonitoring is possible without being noticed; the ultrathin and soft sheet system realizes attachment of the device to the skin. view more
Credit: Osaka University
Osaka, Japan - Scientists at Osaka University, in cooperation with JOANNEUM RESEARCH (Weiz, Austria), introduced wireless health monitoring patches that use embedded piezoelectric nanogenerators to power themselves with harvested biomechanical energy. This work may lead to new autonomous health sensors as well as battery-less wearable electronic devices.
As wearable technology and smart sensors become increasingly popular, the problem of providing power to all of these devices become more relevant. While the energy requirements of each component may be modest, the need for wires or even batteries become burdensome and inconvenient. That is why new energy harvesting methods are needed. Also, the ability for integrated health monito