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World's first 238-layer 512Gb TLC 4D NAND developed in July; expected to begin mass production in the first half of 2023 Providing highest, smallest NAND product while remarkably improving productivity, data transfer speed and power efficiency "Will continue innovations to find breakthroughs in technological challenges" SEOUL, South Korea, Aug. 3, 2022 /PRNewswire/ --SK hynix Inc. (or "the company", www.skhynix.com) announced today that it has developed the industry's highest 238-layer NAND Flash product. The company has recently shipped samples of the 238-layer 512...

/PRNewswire/ -- SK hynix Inc. (or "the company", www.skhynix.com) announced today that it has developed the industry's highest 238-layer NAND Flash product....

/PRNewswire/ -- SK hynix Inc. (or "the company", www.skhynix.com) announced today that it has developed the industry's highest 238-layer NAND Flash product....

/PRNewswire/ -- Flash Memory Summit 2022 (FMS) today announced this year's recipients of its Lifetime Achievement Award. The three recipients are: Yoshishige...

/PRNewswire/ -- Flash Memory Summit 2022 (FMS) today announced this year's recipients of its Lifetime Achievement Award. The three recipients are: Yoshishige...