Remote epitaxy, a promising technology for thin film growth and exfoliation, suffers from substrate damage under harsh conditions. In this regard, researchers recently investigated the effect of nano-sized pits on AlN template surface on GaN remote epitaxy. While GaN thin film could be exfoliated at 750 °C, it failed at 1050 °C. At higher temperatures, the nano pits damaged the graphene layer between the template and the film, causing alterations in the film growth mode.