imec demonstrates performance boost for GaN power systems

imec has successfully co-integrated high-performance Schottky barrier diodes and depletion-mode HEMTs on a p-GaN HEMT-based 200 V GaN-on-SOI smart power integrated circuits (ICs) platform developed on 200mm substrates.

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Stefaan Decoutere , ,Transistor Logic ,Gan Schottky ,Power ,Han ,Research ,