It is expected that today's popular FinFET transistor design will give way to stacked nanosheet transistors in the coming years – for various design and technology reasons. TSMC plans to stick with FinFET for 3nm, but Samsung is bravely / dangerously forging ahead with plans for a transition to nanosheet transistors with its 3nm nodes, reports IEEE Spectrum.
Samsung Electronics vice president, Taejoong Song, presented at the IEEE International Solid-State Circuits Conference earlier this month and outlined some key advantages of nanosheet transistors. "We have used FinFET transistors for about a decade, however at 3nm we are using a gate all around transistor," Song told the virtual audience. Going forward he and his team believe that nanosheet transistors will be a winning design as they provide "high speed, low power, and small area."