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Odyssey Semiconductor Technologies, Inc (OTCQB: ODII) Insiders Contribute 8 5% of Funding at $4 per Share

Share this article Share this article ITHACA, N.Y., April 23, 2021 /PRNewswire/  Odyssey Semiconductor Technologies, Inc. ( Odyssey , Odyssey Semiconductor , or the Company ), a semiconductor device company developing innovative high-voltage power switching components based on proprietary Gallium Nitride (GaN) processing technology, today announced Odyssey insiders have provided more than 8.5% of the company s ongoing fundraising at $4 per share. The company announced earlier this month it had raised $5 million (1.25 million shares at $4.00 per share) in a common stock private placement. The financing round will further fund the development and production of high-voltage vertically-conducting GaN power-switching devices. Recent Business Highlights Revenues for fiscal year 2020 were $1.374 million.

Odyssey Semiconductor Technologies, Inc (OTCQB: ODII) Raises $5 Million to Further Develop and Commercialize GaN Power Devices for Electric Vehicles and Solar Energy

Share this article ITHACA, N.Y., April 1, 2021 /PRNewswire/ Odyssey Semiconductor Technologies, Inc. ( Odyssey , Odyssey Semiconductor , or the Company ), a semiconductor device company developing innovative high-voltage power switching components based on proprietary Gallium Nitride (GaN) processing technology, today announced it has raised $5 million (1.25 million shares at $4.00 per share) in a common stock private placement to further fund the development and production of high-voltage vertically-conducting GaN power-switching devices. GP Nurmenkari, as consulted by Intuitive Venture Partners, acted as the exclusive placement agent. We welcome the new shareholders to Odyssey Semiconductor and their support in enabling more efficient and compact power conversion for applications such as electric vehicles, said Alex Behfar, Chairman and CEO of Odyssey Semiconductor. With the entire world focused on the adoption of clean energy and electric power, we re excited about the

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