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STMicroelectronics extends MasterGaN family STMicroelectronics has extended its MasterGaN platform with the unveiling of the MasterGaN2. The device is the first in the new family to contain two asymmetric gallium-nitride (GaN) transistors, delivering an integrated solution that s suited to soft-switching and active-rectification converter topologies. The 650V normally-off GaN transistors have on-resistance (RDS(on)) of 150mΩ and 225mΩ. Each is combined with an optimised gate driver, helping to simplify the use of GaN technology. By combining advanced integration with GaN’s inherent performance advantages, MasterGaN2 has been designed to further extend the efficiency gains, size reduction, and weight savings of topologies such as active clamp flyback.

Gan high electron mobility transistorsPower semiconductorsகண் உயர் எதிர் மின்னணு இயக்கம் திரிதடையம்பவர் குறைக்கடத்திகள்