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Home > Press > New form of silicon could enable next-gen electronic and energy devices: Novel crystalline form of silicon could potentially be used to create next-generation electronic and energy devices
Visualization of the structure of 4H-Si viewed perpendicular to the hexagonal axis. A transmission electron micrograph showing the stacking sequence is displayed in the background.
CREDIT
Image courtesy of Thomas Shiell and Timothy Strobel
Abstract:
A team led by Carnegie s Thomas Shiell and Timothy Strobel developed a new method for synthesizing a novel crystalline form of silicon with a hexagonal structure that could potentially be used to create next-generation electronic and energy devices with enhanced properties that exceed those of the normal cubic form of silicon used today.
The researchers detailed their findings in a paper published May 26 in the journal
AGU Advances.
What causes deep-focus earthquakes?
Deep-focus earthquakes are earthquakes that occur between 185 and 435 miles below the Earth’s surface. First detected in the 1920s, these earthquakes continue to confound scientists to this day.
“The big problem that seismologists have faced is how it’s possible that we have these deep-focus earthquakes at all,” said co-author Lara Wagner.
Usually, earthquakes occur near the surface after stress builds up between two blocks of rock. When enough stress has accumulated, it causes this pair of rocks to suddenly slip and slide past each other, triggering earthquakes.