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World's first 238-layer 512Gb TLC 4D NAND developed in July; expected to begin mass production in the first half of 2023 Providing highest, smallest NAND product while remarkably improving productivity, data transfer speed and power efficiency "Will continue innovations to find breakthroughs in technological challenges" SEOUL, South Korea, Aug. 3, 2022 /PRNewswire/ SK hynix Inc. (or "the company", www.skhynix.com) announced today that it has developed the industry's highest 238-layer NAND Flash product. The company has recently shipped samples of the 238-layer 512Gb triple level cell (TLC) 4D NAND product to customers with a plan to start mass production in the first half of 2023. "The latest achievement follows development of the 176-layer NAND product in December 2020," the company stated. "It is notable that the latest 238-layer product is most layered and smallest in area at the same time." Triple Level Cell (TLC): NAND Flash prod