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Pioneering Beyond-Silicon Technology Via Residue-Free Field Effect Transistors

Beyond-silicon technology demands ultra-high-performance field-effect transistors (FETs). Transition metal dichalcogenides (TMDs) provide an ideal material platform, but the device performances such as contact resistance, on/off ratio, and mobility are often limited by the presence of interfacial residues caused by transfer procedures.
South Korea Myoung Hee Megan Craig Solutions For Polymer Analysis Development Industry Institute For Basic Science Solutions For Polymer Analysis Development
Source: azom.com

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Residue-Free Field Effect Transistors Unleash Technology Revolution

Technology is about to undergo a revolution that will alter how devices are utilized. A group of brilliant scientists from the Institute for Basic Science (IBS) in South Korea, led by the esteemed Professor Young Hee Lee, have made an innovative finding that could significantly enhance the production of field-effect transistors (FET).
South Korea Megan Craig Young Hee Lee Chandan Biswas Ashok Mondal Free Field Effect Transistors Unleash Technology Revolution
Source: azom.com

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