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UK made: 650V 200mm GaN foundry process for automotive in Wales
The UK government is backing the Compound Semiconductor Centre and Newport Wafer Fab to develop a 200mm Gallium Nitride power transistor foundry process.
Both these organisations are inside the compound semiconductor cluster in South Wales.
Coordinated jointly by the Centre and Fab, the intention is to deliver a 650V GaN-on-silicon HEMTs (all GaN power transistors are high electron mobility transistors) on 200mm wafers.
“We are initially targeting the electric vehicle segment of the market, including traction inverters, “said the Centre’s GaN programme manager Rob Harper. “As the project progresses, we hope to roll out custom foundry offerings that address additional market segments including mobile and laptop fast chargers, and energy storage inverters.”