The development of ultrasonic-guided wave sensors is of great significance for structural health monitoring (SHM). In this work, a shear horizontal (SH) ultrasonic guided wave sensor based on the Ca3TaGa3Si2O14 (CTGS) piezoelectric single crystal is demonstrated. The findings reveal that the CTGS-based ultrasonic guided wave sensor is proficient in transmitting and receiving pure fundamental SH wave (SH0 wave) along two orthogonal main directions (0° and 90°) over a wide frequency range (100–350 kHz), exhibiting strong response to the SH0 wave. Under the driving voltage of 100 V, the peak-to-peak values of the sensor output are 110.8 and 8.0 mV at room temperature and high temperature of 600 °C, respectively. Additionally, the signal-to-noise ratio (SNR) of the CTGS-based SH0 sensor is evaluated to be >18.9 dB even at the elevated temperature of 600 °C. Moreover, the CTGS-based SH0 sensor showcases its reasonable defect localization ability at temperatures up to 600 °C, demon
Sample Preparation and Deprocessing
Silicon Photonic Devices
The symposium has consistently provided attendees with the latest analysis techniques necessary to obtain accurate and timely information on device-related issues. The collected proceedings papers now available in the ASM Digital Library serve as a comprehensive reference of the state-of-the-art research, development, tools, and techniques as presented at ISTFA conferences over the most recent quarter decade. The launch of ISTFA Proceedings enables convenient access to this valuable content to the EDFAS membership and the broader electronic device community, said Dr. James J. Demarest, EDFAS President. We are very pleased that the ISTFA content was selected by ASM as the first set of conference content to be added to the ASM Digital Library. Enhancing the ability of ISTFA content to be discovered, accessed, and cited has been a significant goal of EDFAS.