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Pioneering Beyond-Silicon Technology Via Residue-Free Field Effect Transistors

Beyond-silicon technology demands ultra-high-performance field-effect transistors (FETs). Transition metal dichalcogenides (TMDs) provide an ideal material platform, but the device performances such as contact resistance, on/off ratio, and mobility are often limited by the presence of interfacial residues caused by transfer procedures.
South Korea Myoung Hee Megan Craig Solutions For Polymer Analysis Development Industry Institute For Basic Science Solutions For Polymer Analysis Development
Source: azom.com

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