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Fabricating Stable, High-mobility Transistors for Next-generation Display Technologies

Amorphous oxide semiconductors (AOS) are a promising option for the next generation of display technologies due to their low costs and high electron (charge carrier) mobility. The high mobility, in particular, is essential for high-speed images. But AOSs also have a distinct drawback that is hampering their commercialization — the mobility–stability tradeoff. One of the…
Masato Sasase Hideo Hosono Shigenori Ueda Yu Shien Shiah Katsumi Abe Junghwan Kim

New family of atomic-thin electride materials discovered | EurekAlert! Science News

 E-Mail IMAGE: Yellow isosurfaces on left panel indicate electrons localized in-between the C3 trimers. Ionized structure on the right has no trapped electrons, and some of the M atoms have been largely... view more  Credit: Soungmin Bae and Hannes Raebiger An exploratory investigation into the behavior of materials with desirable electric properties resulted in the discovery of a structural phase of two-dimensional (2D) materials. The new family of materials are electrides, wherein e...
Minas Gerais South Korea Yoon Gu Kang Kaoru Ohno Hideo Hosono Modelamienoty Simulaci

IGP - International Graduate Program

Lkhamsuren Ganchimeg (Gana) from Mongolia 1st-year doctoral degree student in the Department of Materials Science and Engineering, School of Materials and Chemical Technology Program: IGP (A), International Program for Interdisciplinary Science and Engineering (IPISE) Prior affiliation: National University Mongolia Why did you choose Tokyo Techs IGP? I used to hear about Japanese universities being good at science and engineering before I came here. A lot of discoveries and technologies have be...
United States New Zealand Sri Lanka Skane Lan Peter Rice Lkhamsuren Ganchimeg Gana

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