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Samsung Develops Industrys First HKMG-Based DDR5 Memory; Ideal for Bandwidth-Intensive Advanced Computing Applications

Posted March 25th, 2021 for Samsung 512GB capacity DDR5 module made possible by an 8-layer TSV structure HKMG material reduces power by 13 percent while doubling the speed of DDR4 Samsung Electronics, the world leader in advanced memory technology, today announced that it has expanded its DDR5 DRAM memory portfolio with the industryโ€™s first 512GB DDR5 module based on High-K Metal Gate (HKMG) process technology. Delivering more than twice the performance of DDR4 at up to 7,200...
Young Soo Sohn Carolyn Duran Io Technology At Intel Samsung Electronics Memory Planning Enabling Group At Samsung Electronics Highk Metal Gate

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