Magnetic Tunnel Junction Technology for Angstrom Semiconductor Era
A research group at Tohoku University has shown that fast switching down to 3.5 ns in sub-five-nm ultra-small magnetic tunnel junctions (MTJs) can be
Takanobu Shinoda Butsurin Jinnai Hideo Ohno Shunsuke Fukami Kyota Watanabe International Electron Devices Meeting
Source: miragenews.com