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ROHM s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices -November 08, 2023 at 05:02 pm EST
Class-leading unit of nanoseconds gate drive contributes to greater energy savings and miniaturization in LiDAR applications and data centersSanta Clara, CA and Kyoto, Japan, Nov. 08, 2023 ROHM.
Chiao tung university
Xinzhu xian
United states
Los angeles
San diego
Santa clara
Gaas mosfets
Yue ming hsin
Professor chin hsia chang gung university
Department of electrical engineering
Optical research at national central university
Co ltd
Anadigics inc
National central university
Coherent corp
University of california
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