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May 21, 2024
Focus on wide-bandgap devices for e-mobility and power supply applications
December 8, 2023
KYOTO, Japan & KAWASAKI, Japan--(BUSINESS WIRE)--Dec 7, 2023--
September 14, 2023
In-depth technical papers extend the boundaries of silicon carbide next-gen semiconductor performance across EV, data center, solar and appliance/industrial marketsTORRANCE, Calif., Sept. 14, 2023 ...
September 14, 2023
TORRANCE, Calif., Sept. 14, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS) announced participation at the International Conferenc...
September 14, 2023
14.09.2023 - In-depth technical papers extend the boundaries of silicon carbide (SiC) next-gen semiconductor performance across EV, data center, solar and appliance/industrial marketsTORRANCE, Calif., Sept. 14, 2023 (GLOBE NEWSWIRE) - Navitas Semiconductor ...
September 14, 2023
In-depth technical papers extend the boundaries of silicon carbide (SiC) next-gen semiconductor performance across EV, data center, solar and...
December 15, 2022
ROHM Semiconductor has developed a wide-ranging portfolio of SiC power devices most viable candidates for next-generation semiconductors
November 22, 2022
Santa Clara, CA and Kyoto, Japan, Nov. 22, 2022 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced they have signed a joint development agreement...