He New Process Also Provides Mtp Multi Time Programmable And Otp One Ip Without Requiring Any Additional Steps With These Merits News Today : Breaking News, Live Updates & Top Stories | Vimarsana

SEOUL, South Korea, June 9, 2022 /PRNewswire/ Key Foundry, the only pure-play foundry in Korea, announced today that it will release a 0.18-micron 30V NON-EPI (Epitaxy) BCD (Bipolar-CMOS-DMOS) process for low power PMICs. This new 0.18-micron 30V NON-EPI BCD process of Key Foundry shows the same level of performance compared to the existing EPI BCD process even without EPI layer. This new process is suitable for power semiconductors, which require higher voltage ratings, higher reliability and higher efficiency compared to ordinary semiconductors. It can be used in the production of low power PMICs such as DC-DC ICs and charger ICs for smartphones and smartwatches. This new process maintains the same Rsp (Specific On-resistance) with the existing 0.18-micron EPI BCD process that are currently used for mass production. Key Foundry will support various power semiconductor devices in the range of 5V to 30V. As this new 0.18-micron 30V NON-EPI BCD process requires no EPI process, the proc

Soult ukpyolsiSouth koreaJong leeKey foundrySpecific on resistanceMulti time programmableOne time programmableTae jong leeSouth koreaJune 9022 prnewswire key foundryHe only pure play foundry in koreaNnounced today that it will releasea 0 18 micron 30v non epi epitaxy bcd bipolar cmos dmos process for low power pmics this new of key foundry shows the same level performance compared to existing even without layer is suitable semiconductorsHich require higher voltage ratingsIgher reliability and higher efficiency compared to ordinary semiconductors it can be used in the production of low power pmics such as dc ics charger for smartphones smartwatches this new process maintains same rsp specific on resistance with existing 0 18 micron epi bcd that are currently mass key foundry will support various semiconductor devices range 5v 30v non requires noHe process efficiency is improved