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Nanotechnology Now - Press Release: CEA-Leti & Dolphin Design Report FD-SOI Breakthrough that Boosts Operating Frequency by 450% and Reduces Power Consumption by 30%: Joint Paper Presented at ISSCC 2021 Shows How New Adaptive Back-Biasing Technique Overcomes Integration Limits in Chip Design Flows

Our NanoNews Digest Sponsors Home > Press > CEA-Leti & Dolphin Design Report FD-SOI Breakthrough that Boosts Operating Frequency by 450% and Reduces Power Consumption by 30%: Joint Paper Presented at ISSCC 2021 Shows How New Adaptive Back-Biasing Technique Overcomes Integration Limits in Chip Design Flows Abstract: CEA-Leti and Dolphin Design have developed an adaptive back-biasing (ABB) architecture for FD-SOI chips that can be seamlessly integrated in the digital design flow with industrial-grade qualification, overcoming integration drawbacks of existing ABB techniques. CEA-Leti & Dolphin Design Report FD-SOI Breakthrough that Boosts Operating Frequency by 450% and Reduces Power Consumption by 30%: Joint Paper Presented at ISSCC 2021 Shows How New Adaptive Back-Biasing Technique Overcomes Integration Limits in Chip Design Flows

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