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Understanding Graphene Growth on Insulating Substrates
The thinnest material, graphene, is the most promising materials for many applications, such as in electronics, energy storage and etc. For high performance electronic applications, synthesizing graphene directly on an insulating substrate is highly desired. To date, a great deal of efforts has been dedicated to synthesizing graphene on numerous insulating substrates, such as SiO2, Al2O3, Si3N4, BN. It is found that the growth of graphene on these insulating substrates are generally 10,000 times slower than that on metallic substrates (Figure 1) and, as a consequence, the graphene synthesized on an insulating substrate is generally with very low quality and the productivity is very low. To understand why graphene growth on an insulating substrate is so different from that on metallic substrates is critical for optimizing the experiential design but such a question has never been answered satisfactory.
Korea Advanced Institute of Science and Technology
– The first images of mid-infrared optical waves compressed 1,000 times captured using a highly sensitive scattering-type scanning near-field optical microscope. –
KAIST researchers and their collaborators at home and abroad have successfully demonstrated a new methodology for direct near-field optical imaging of acoustic graphene plasmon fields. This strategy will provide a breakthrough for the practical applications of acoustic graphene plasmon platforms in next-generation, high-performance, graphene-based optoelectronic devices with enhanced light-matter interactions and lower propagation loss.
It was recently demonstrated that ‘graphene plasmons’ – collective oscillations of free electrons in graphene coupled to electromagnetic waves of light – can be used to trap and compress optical waves inside a very thin dielectric layer separating graphene from a metallic sheet. In such a configuration, graphene’s conductio