Scientists develop high-performance transistor models and circuits useful for space and defense applications
Indian researchers have developed a high performance industry-standard model for Aluminium gallium nitride (AlGaN/GaN) High Electron Mobility Transistors (HEMTs) with simple design procedures which can be used to make high-power Radio Frequency (RF)
Uttar Pradesh Yogesh Singh Chauhan Fund For Improvement Technology Development Programme Department Of Science Semiconductor Device Analyzer
Source: indiaeducationdiary.in