TOKYO, Japan, June 16, 2022 ― Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced that it has developed circuit technologies for an embedded spin-transfer torque magnetoresistive random-access memory (STT-MRAM, hereinafter MRAM) test chip with fast read and write operations fabricated using a 22-nm process. The test chip includes a 32-megabit (Mbit)…
Renesas has developed a 22nm process for embedded spin-transfer torque magnetoresistive random-access memory (STT-MRAM). The test chip includes a 32Mbit em
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