Renesas Develops Circuit Technologies for 22-nm Embedded STT-MRAM with Faster Read and Write Performance for MCUs in IoT Applications
TOKYO, Japan, June 16, 2022 ― Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced that it has developed circuit technologies for an embedded spin-transfer torque magnetoresistive random-access memory (STT-MRAM, hereinafter MRAM) test chip with fast read and write operations fabricated using a 22-nm process. The test chip includes a 32-megabit (Mbit)…
United States Fast Read Technology Employing High Fast Write Technology Renesas Electronics Corporation Write Technology Simultaneous Write Bit Number Optimization
Source: eejournal.com