Phase-change memory via a phase-changeable self-confined nano-filament
Phase-change memory (PCM) has been considered a promising candidate for solving von Neumann bottlenecks owing to its low latency, non-volatile memory property and high integration density1,2. However, PCMs usually require a large current for the reset process by melting the phase-change material into an amorphous phase, which deteriorates the energy efficiency2–5. Various studies have been conducted to reduce the operation current by minimizing the device dimensions, but this incr...
New York United States Nano Lett Pd Properties Applications Springer International Publishing International Electron Devices Meeting
Source: nature.com