New Nanomagnetism Principle for Next-Generation Memory Devices
New Nanomagnetism Principle for Next-Generation Memory Devices Written by AZoNanoJan 13 2021 The Korea Institute of Science and Technology (KIST) reports that a team of researchers under Dr Kyoung-Whan Kim from the Center for Spintronics has come up with a new principle for spin memory devices—regarded as the next-generation memory devices. Dr Kyoung-Whan Kim at the Center for Spintronics, KIST. Image Credit: Korea Institute of Science and Technology. The advancement represents new applicabil...
South Korea Kyoung Whan Kim Institutional Rd Program Korea Institute Of Science Ministry Of Science Korea Institute
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