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Mitsubishi Electric to Expand Product Range of Ku-band GaN HEMTs
February 18, 2021 GMT
TOKYO (BUSINESS WIRE) Feb 17, 2021
Mitsubishi Electric Corporation (TOKYO: 6503) announced today that two new 13.75–14.5 GHz (Ku-band) 30W (45.3dBm) gallium-nitride high-electron-mobility transistors (GaN HEMTs) will be added to the company’s GaN HEMT lineup for satellite-communication (SATCOM) earth stations. The two products, one for multi-carrier 1 communication and the other for single-carrier 2 communication, will support increased data-transmission capacity and smaller earth stations. Sales will begin on March 15.
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2 Communication method that uses a single-frequency carrier signal