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Stress-free path to stress-free metallic films paves the way for next-gen circuitry

 E-Mail IMAGE: (top left) An illustration of the HiPIMS process (top right) The energy distribution of tungsten ions arriving at the substrate over time. At short times, there are a large proportion. view more  Credit: Tokyo Metropolitan University Tokyo, Japan - Researchers from Tokyo Metropolitan University have used high power impulse magnetron scattering (HiPIMS) to create thin films of tungsten with unprecedentedly low levels of film stress. By optimizing the timing of a substrate bias pulse with microsecond precision, they minimized impurities and defects to form crystalline films with stresses as low as 0.03 GPa, similar to those achieved through annealing. Their work promises efficient pathways for creating metallic films for the electronics industry.

Stress-free path to stress-free metallic films paves way for next-gen circuitry

Tokyo Metropolitan University Researchers from Tokyo Metropolitan University have used high power impulse magnetron scattering (HiPIMS) to create thin films of tungsten with unprecedentedly low levels of film stress. By optimizing the timing of a “substrate bias pulse” with microsecond precision, they minimized impurities and defects to form crystalline films with stresses as low as 0.03 GPa, similar to those achieved through annealing. Their work promises efficient pathways for creating metallic films for the electronics industry. Modern electronics relies on the intricate, nanoscale deposition of thin metallic films onto surfaces. This is easier said than done; unless done right, “film stresses” arising from the microscopic internal structure of the film can cause buckling and curving over time. Getting rid of these stresses usually requires heating or “annealing”. Unfortunately, many of the best metals for the job e.g. tungsten have high melting points, meaning that

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