E-Mail IMAGE: Schematic representation of Fe3GeTe2-based non-volatile memory prototype. Fe3GeTe2 is a ferromagnet, where its spins (little white arrows) align in the same direction. The orientation of the spins defines 1 or... view more Credit: POSTECH & SNU Researchers at Pohang University of Science and Technology (POSTECH) and Seoul National University in South Korea have demonstrated a new way to enhance the energy efficiency of a non-volatile magnetic memory device called SOT-MRAM. Published in Advanced Materials, this finding opens up a new window of exciting opportunities for future energy-efficient magnetic memories based on spintronics. In modern computers, the random access memory (RAM) is used to store information. The SOT-MRAM (spin-orbit torque magnetic RAM) is one of the leading candidates for the next-generation memory technologies that aim to surpass the performance of various existing RAMs. The SOT-MRAM may operate faster than the fastest existing RAM (SRAM) and maintain information even after the electric energy supply is powered off whereas all fast RAMs existing today lose information as soon as the energy supply is powered off. The present level of the SOT-MRAM technology falls short of being satisfactory, however, due to its high energy demand; it requires large energy supply (or large current) to write information. Lowering the energy demand and enhancing the energy efficiency is an outstanding problem for the SOT-MRAM.