II-VI Incorporated Unveils 100 Gbps Indium Phosphide Directly Modulated Lasers For High-Speed Transceivers Deployed In Datacenters Pittsburgh, PA (GLOBE NEWSWIRE) - II‐VI Incorporated (Nasdaq: IIVI), a global leader in semiconductor lasers for optical communications, today announced the introduction of 100 Gbps indium phosphide (InP) directly modulated lasers (DMLs) for high-speed transceivers deployed in datacenters. The growing demand for 400 and 800 gigabit Ethernet (GbE) transceivers is driving substantial investments in technology advancements of DMLs due to their lower cost and lower power consumption compared to electro-absorption modulated lasers (EMLs) currently used in these high-speed transceivers. II-VI’s 100 Gbps DMLs are differentiated by their ability to achieve state-of-the-art modulation speed and signal quality at high output power and low power consumption. As a result, II-VI’s DMLs are preferred over EMLs in 400 GbE and 800 GbE transceivers that use 100 Gbps optical lanes.