Researchers Establish a Design Guideline for Practical Applications of Graphene Devices Written by AZoNanoJun 4 2021 Scientists from Osaka University, in association with the Toyo University and the Kyushu Institute of Technology, have elucidated the expression mechanism of metallic and semiconducting properties in graphene nanoribbons (GNRs) by studying the carrier transport characteristics in the field-effect transistor (FET) through a multilayer GNR channel. Carrier transport characteristics of the FETs using the GNR channel. Image Credit: Osaka University. Using a solid template, the researchers created multilayer GNRs with accurately regulated numbers of layers through a chemical vapor deposition method. This enabled us to compare the observed carrier transport properties in the FET using a multilayer GNR channel with various numbers of layers and device simulations based on theoretical calculations.