B, E) C-ω curves of the Si diode (B), perovskite thin single crystal (C), and perovskite thin film solar cell (E) measured at difference dc biases. The dashed lines show the calculated C D and F) SCASP-simulated C-ω curves of a trap-free perovskite thin single crystal (D) and a perovskite thin film solar cell (F). Nonetheless, even under the framework in which carrier density and profile distance directly from CV measurement are used to represent those from DLCP measurement, the following analysis shows that the geometry and diffusion capacitance have no impact on the measurement of charge trap densities by DLCP. Equation 1 predicts that carrier density is independent of applied ac frequency (ω); however, the experimental results in (