Scientists develop high-performance transistor models and ci

Indian researchers have developed a high performance industry-standard model for Aluminium gallium nitride (AlGaN/GaN) High Electron Mobility Transistors (HEMTs) with simple design procedures which can be used to make high-power Radio Frequency (RF)

Related Keywords

Kanpur , Uttar Pradesh , India , Yogesh Singh Chauhan , Fund For Improvement , Technology Development Programme , Department Of Science , Semiconductor Device Analyzer , Journal Of The Electron Devices Society , High Electron Mobility Transistors , Radio Frequency , Low Noise Amplifiers , Advanced Spice Model , Device Analyzer , Maury Microwaves , Double Channel Gan , Physics Based Analytical , Electron Devices Society , Compensate Frequency Dependent Behavior , Patent Filed ,