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Two-dimensional materials, such as transition metal dichalcogenide, have uses in public health due to their huge surface area and high surface sensitivity, as well as their outstanding electrical, optical, and electrochemical properties.
The wide range of material options and potential applications in a variety of fields, including optoelectronics and electronics, has attracted attention toward two-dimensional transition metal chalcogenides (2D TMCs).
The first 2D mica resistive random access memory (RRAM) device has been demonstrated, which exhibit unique non-Markov chain characteristic. The migration of inner K+ in mica under electrical field is responsible for this unique transport behavior. Our work shows great potential of 2D mineral materials for electronics.