NXP and Hitachi Energy Collaborate on Power Module to Accelerate Silicon Carbide Adoption in E-mobility
What's new: NXP® Semiconductors has announced a collaboration with Hitachi Energy to accelerate the adoption of silicon carbide (SiC) power semiconductor modules in e-mobility. The project aims to provide more efficient, reliable and functionally safe SiC MOSFET-based solutions for powertrain inverters comprised of NXPs advanced, high-performance GD3160 isolated HV Gate Drivers and Hitachi Energy’s RoadPak automotive SiC MOSFET…
Source: eejournal.com