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World's first 238-layer 512Gb TLC 4D NAND developed in July; expected to begin mass production in the first half of 2023 Providing highest, smallest NAND product while remarkably improving productivity, data transfer speed and power efficiency "Will continue innovations to find breakthroughs in technological challenges" SEOUL, South Korea, Aug. 3, 2022 /PRNewswire/ --SK hynix Inc. (or "the company", www.skhynix.com) announced today that it has developed the industry's highest 238-layer NAND Flash product. The company has recently shipped samples of the 238-layer 512...

/PRNewswire/ -- Chelsio Communications, Inc., a leading provider of high performance (1/10/25/40/50/100/200/400Gb) Ethernet Unified Wire Adapters and ASICs for...

Samsung has unveiled its next-generation memory solutions at the Flash Memory Summit 2022, the event is being held in Santa Clara, California between the

Back in March it was reported that Apple was seeking alternative NAND Flash Memory chip suppliers due to a contamination incident at Apple’s chief flash memory supplier Kioxia Corp. Apple secured new chips from Samsung and SK Hynix Inc. Today we’re learning that Apple supplier SK Hynix has developed the world’s highest 238-layer 4D NAND Flash Memory.

Samsung announced today its new Memory-semantic SSDs. These new SSDs are based on the CXL interface standard and promise to offer up to 20x or 1900% improvement in random reads, and more.