Samsung starts mass production of next-gen V-NAND
Samsung Electronics has started making 286-layer NAND flash memory chips, which expand bit density by 50% compared with 8th-generation V-NAND tech.
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Samsung Electronics has started making 286-layer NAND flash memory chips, which expand bit density by 50% compared with 8th-generation V-NAND tech.
Samsung has started mass production of its one-terabit (Tb) triple-level cell (TLC) 9th-generation vertical NAND (V-NAND). This is seemingly aimed at strengthening the company’s position in the NAND flash market, particularly within the high-performance solid state drive (SSD) segment.
Industry-leading bit density with about 50% increase compared to previous generation Productivity for the V-NAND's groundbreaking double-stack structure enhanced...
SEOUL, South Korea--(BUSINESS WIRE)--Apr 23, 2024--
Samsung has announced that it has started mass production of its new 8th-Gen Vertical NAND, the company has said that this is the industry’s highest bit