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Two-Dimensional (2D) III-V nitrides are anticipated to exhibit exceptional material properties with wide-ranging technological significance. We report, ion beam synthesis of buried 2D Aluminium Gallium Nitride structures with enhanced piezoelectric modulus. We propose three criteria for the formation of 2D AlGaN layers by ion implantation. The 2D layers were synthesized by Xe implantation into epitaxially grown, strain-free Al0.5Ga0.5N thin films and their presence was confirmed by scanning transmission electron microscopy. Alternating planar and buckled 2D III-Nitride layers in conjunction wi...

Abstract We report the evolution of uniaxial strain, resulting in an expansion of the c-axis in the wurtzite structure by up to 1 %, without significant degradation of the crystal structure of 30 keV Zr implanted epitaxial AlN films, grown on Si substrates. Raman and X-ray absorption spectroscopies demonstrated that the dominant defects are Zr , V and V . The uniaxial strain can be attributed to a weakening of the Metal-N π bond along the c-axis. Monte Carlo simulations further predict the formation of a cation-rich region within the Zr implantation range, along with a buried anion-rich la...