"Charge Collection in SOI Microdosimeters and their Radiation Hardness" by V. A. Pan, L. T. Tran et al.
A new batch of microdosimeters has been extensively studied for their charge collection efficiency (CCE) properties, as well as their radiation hardness for medical, space and accident applications. Silicon-on-insulator (SOI) microdosimeters with an active layer thickness of 10, 20 and 50 μm have been investigated and were characterized with a 24 MeV carbon ion beam as well as a Co-60 gamma source. A negative pulse was observed in addition to the positive pulses generated within the sensitive volumes (SVs) by incident ions which led to undesirable low energy events in the SOI microdosimeters ...