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Tokyo Tech scientists showcased that donor doping within a mother material containing disordered intrinsic oxygen vacancies, as opposed to the commonly employed acceptor doping in vacancy-free materials, significantly amplifies the conductivity and durability of perovskite-type proton conductors within the temperature range of 250–400 ?.
<p>Donor doping into a mother material with disordered intrinsic oxygen vacancies, instead of the widely used strategy of acceptor doping into a material without oxygen vacancies, can greatly enhance the conductivity and stability of perovskite-type proton conductors at intermediate and low temperatures of 250–400 °C, as demonstrated by Tokyo Tech scientists (e.g. 10 mS/cm at 320 °C). This innovative approach provides a new design direction for proton conductors for fuel cells and electrolysis cells.</p>