GaN HEMTs on diamond demonstrates twice the heat dissipation of GaN-on-SiC
Layer of 3C-SiC between GaN and diamond reduces thermal resistance of interface
Source: semiconductor-today.com
Stay updated with breaking news from Practical Device Processes . Get real-time updates on events, politics, business, and more. Visit us for reliable news and exclusive interviews.
Layer of 3C-SiC between GaN and diamond reduces thermal resistance of interface