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Deep ICP-RIE Etched Trenches with Sidewall Slope Control of GaAs-type High Power PLDs - Vimarsana News

Deep ICP-RIE Etched Trenches with Sidewall Slope Control of GaAs-type High Power PLDs

As part of LASER COMPONENTS‘ presentation marathon at the SPIE LASER conference during Photonics West, Thierno-Mamoudou Diallo, Opto-Electronics and III-V Semiconductor Specialist at LASER COMPONENTS Canada, will introduce new micro-fabrication methods on January 28th at 11:30am PST.