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imec demonstrates performance boost for GaN power systems

Imec has successfully co-integrated high-performance Schottky barrier diodes and depletion-mode HEMTs on a p-GaN HEMT-based 200 V GaN-on-SOI smart power integrated circuits (ICs) platform developed on 200mm substrates. ....

Stefaan Decoutere , Transistor Logic , Gan Schottky ,

Imec demonstrates successful monolithic integration of Schottky diodes

LEUVEN (Belgium), 13 December, 2021 This week, at the 2021 International Electron Devices Meeting (IEEE IEDM 2021), imec, a world-leading research and innovation center in nanoelectronics and digital technologies, presents the successful co-integration of high-performance Schottky barrier diodes and depletion-mode HEMTs on a p-GaN HEMT-based 200 V GaN-on-SOI smart power integrated circuits (ICs) platform developed… ....

Stefaan Decoutere , International Electron Devices Meeting , Electron Devices Meeting , Transistor Logic , Gan Schottky ,