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Alliance Memory 16Gb and 32Gb LPDDR4X SDRAMs Combine Low-Voltage Operation of 0.6V With Fast Clock Speeds of 2.133GHz and High Data Rates of 4.2Gbps

Renters displaced as units condemned | News, Sports, Jobs - Adirondack Daily Enterprise

SARANAC LAKE — Several residents of an apartment building on Broadway are being ordered to move out of their homes after the village deemed their units “unf

Vishay Intertechnology's EFI Warwick Factory Certified to IATF 16949:2016 for IGBR Product Family

Back Contact Wirebondable Gate Resistors Reduce Noise in SiC MOSFET Power ModulesMALVERN, Pa., March 25, 2024 (GLOBE NEWSWIRE) -- The Specialty Thin Film (STF) division of Vishay Intertechnology, Inc. (NYSE: VSH) today announced that its Electro-Films (EFI) factory in Warwick, Rhode Island, has been certified to the IATF 16949:2016 quality standard for the IGBR family of back contact wirebondable gate resistors, designed to reduce noise in silicon carbide (SiC) MOSFET power modules. Based on ISO

Vishay Intertechnology's EFI Warwick Factory Certified to

Back Contact Wirebondable Gate Resistors Reduce Noise in SiC MOSFET Power Modules...

Vishay Intertechnology's EFI Warwick Factory Certified to IATF 16949:2016 for IGBR Product Family -March 25, 2024 at 11:00 am EDT

MALVERN, Pa., March 25, 2024 -- The Specialty Thin Film division of Vishay Intertechnology, Inc. today announced that its Electro-Films factory in Warwick, Rhode Island, has been certified to...

Vishay Intertechnology 80 V Symmetric Dual MOSFET Delivers Best in Class RDS(ON) in PowerPAIR® 3x3FS to Increase Power Density, Efficiency, and Thermal Performance

Vishay Intertechnology 80 V Symmetric Dual MOSFET Delivers

The Vishay Intertechnology dual MOSFET released today can be used in place of two discrete devices typically specified in the PowerPAK® 1212 package....

Resident dies in Saranac Lake apartment building fire

SARANAC LAKE — Elm Street resident Michael Simmons died in an apartment building fire on Sunday.

Vishay Intertechnology IGBT Power Modules in Redesigned INT-A-PAK Package Reduce Conduction and Switching Losses

21.02.2024 - Built on Trench IGBT Technology, Half-Bridge Devices Offer Choice of Low VCE(ON) or Low Eoff for High-Current Inverter Stages MALVERN, Pa., Feb. 21, 2024 (GLOBE NEWSWIRE) - Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new ...

Vishay Intertechnology 30 V N-Channel MOSFET With Source Flip Technology Delivers Best in Class RDS(ON) Down to 0.71 mΩ in PowerPAK® 1212-F

MALVERN, Pa., Feb. 14, 2024 -- Vishay Intertechnology, Inc. today introduced a versatile new 30 V n-channel TrenchFET® Gen V power MOSFET that delivers increased power density and enhanced...