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1200V MOSFET Modules Meet High Power Density Needs

Infineon Technologies has upgraded its EasyDUAL CoolSiC MOSFET modules with a new aluminum nitride (AIN) ceramic. The devices come in half-bridge configuration with an on-state resistance (RDS(on)) of 11mΩ in an EasyDUAL 1B package and 6mΩ in an EasyDUAL 2B package.
Infineon Technologies Coolsic Easy Virtual Power Conference இண்பினெோன் தொழில்நுட்பங்கள்

Infineon upgrades CoolSiC modules with AIN ceramic

Infineon upgrades CoolSiC modules with AIN ceramic Infineon has upgraded its EasyDUAL CoolSiC MOSFET modules with a new aluminum nitride (AIN) ceramic. The devices come in half-bridge configuration with an on-state resistance (R DS(on)) of 11 mΩ in an EasyDUAL 1B package and 6 mΩ in an EasyDUAL 2B package. The EasyDUAL modules FF11MR12W1M1_B70 and FF6MR12W2M1_B70 are equipped with the latest CoolSiC MOSFET technology that features superior gate-oxide reliability. With the improved thermal co...
Coolsic Easy Virtual Power Conference

New EasyDUAL™ CoolSiC™ MOSFET power modules with high-performance ceramic enable increased power density and more compact designs

April 29, 2021 New EasyDUAL™ CoolSiC™ MOSFET power modules with high-performance ceramic enable increased power density and more compact designs Munich, Germany – 29 April 2021 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has upgraded the EasyDUAL™ CoolSiC™ MOSFET modules with a new aluminum nitride (AIN) ceramic. The devices come in half-bridge configuration with an on-state resistance (R  DS(on)) of 11 mΩ in an EasyDUAL 1B package and 6 mΩ in an EasyDUAL 2B package. Wit...
Infineon Technologies Coolsic Easy Virtual Power Conference இண்பினெோன் தொழில்நுட்பங்கள்

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