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Soctera improves GaN HEMT thermal performance

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Soctera Demonstrates Superior Thermal Performance in GaN HEMTs For Next-Generation Telecommunications and Radar Solutions

/PRNewswire/ Soctera, a developer of III-nitride power amplifiers, has demonstrated high-electron-mobility transistors (HEMTs) exhibiting a peak surface.

Cornell universityNew yorkUnited statesAustin hickmanOtto pohlSoctera hemtsPrnewswire socteraScore communicationsSchool of electricalSoctera incCornell nanoscale facilityDod approved ganDefense business accelerator

Soctera demos superior thermal performance in GaN HEMTs for next-gen telecoms and radar

Third-party-verified III-nitride transistors, fabricated on 4-inch wafers produced at IQE, moving towards commercial production with standard foundry processes

Austin hickmanSoctera hemtsNanoscale facilityDod approved ganDefense business accelerator

Rochester firm awarded $1M in DOD-supported microelectronics challenge

Rochester firm awarded $1M in DOD-supported microelectronics challenge
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Christine whitmanMosaic microsystemsDepartment of defenseDepartment of defense manufacturingUs partnership for assured electronicsAssured electronicsCapability expansionInvestment prioritizationDefense business accelerator

Gigantor Technologies Wins $2M Contract at Defense TechConnect Innovation Summit & Expo

Gigantor Technologies Wins $2M Contract at Defense TechConnect Innovation Summit & Expo
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United statesDon gasparMatthew laudonJessica jonesGigantor technologieNathan edwardsFlorida institute for the commercialization of technologyUs partnership for assured electronicsTechconnect division of advanced technology internationalTechnologies winsDefense techconnect innovation summitChief marketing officer jessica jonesDefense business acceleratorMicroelectronics challengeVice presidentTechconnect division