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Soctera improves GaN HEMT thermal performance

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Soctera Demonstrates Superior Thermal Performance in GaN HEMTs For Next-Generation Telecommunications and Radar Solutions

/PRNewswire/ Soctera, a developer of III-nitride power amplifiers, has demonstrated high-electron-mobility transistors (HEMTs) exhibiting a peak surface.

Cornell universityNew yorkUnited statesAustin hickmanOtto pohlSoctera hemtsPrnewswire socteraScore communicationsSchool of electricalSoctera incCornell nanoscale facilityDod approved ganDefense business accelerator

Soctera demos superior thermal performance in GaN HEMTs for next-gen telecoms and radar

Third-party-verified III-nitride transistors, fabricated on 4-inch wafers produced at IQE, moving towards commercial production with standard foundry processes

Austin hickmanSoctera hemtsNanoscale facilityDod approved ganDefense business accelerator

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